| PART |
Description |
Maker |
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| FDH34N40 |
34A, 400V, 0.115Ohm, N-Channel SMPS Power MOSFET
34A, 400V, 0.115 Ohm, N-Channel SMPS Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STY34NB50F |
N-CHANNEL 500V - 0.11 OHM - 34A - MAX247 POWERMESH MOSFET
|
STMicroelectronics
|
| NVMFD5853NL |
Power MOSFET 40V 34A 10 mOhm Dual N-Channel SO-8FL Logic Level
|
ON Semiconductor
|
| IRFAG50 IRFAG50-15 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
HEXFET?TRANSISTORS 1000V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Simple Drive Requirements
|
International Rectifier
|
| FGL60N100BNTDTUNL |
1000V, 60A NPT-Trench IGBT
|
FAIRCHILD SEMICONDUCTOR CORP
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| SUU40N06-25L |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 34A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 34A条（丁）|251
|
Vishay Intertechnology, Inc.
|
| FGA50N100BNTD |
1000V, 50A NPT-Trench IGBT CO-PAK
|
FAIRCHILD[Fairchild Semiconductor]
|
| FGH40T100SMD |
1000V, 40A, Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| IXGH12N100A |
1000V low voltage high speed IGBT
|
IXYS
|
